ENEE313H

Prerequisite: Minimum grade of C- in ENEE205; and permission of ENGR-Electrical & Computer Engineering department. Restriction: Must be in one of the following programs (Engineering: Electrical; Engineering: Computer). Credit only granted for: ENEE312 or ENEE313. Basic physics of devices including fields in solids, crystal structure, properties of electrons and holes. Current flow in Si using drift-diffusion model. Properties of the pn junction. Properties of devices including BJTs, FETs and their physical characteristics.